| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 30.0 A |
| Case/Package | TO-247 |
| Polarity | NPN |
| Power Dissipation | 208 W |
| Rise Time | 45.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
The HGTG30N60C3D is a N-channel IGBT with anti-parallel hyperfast diode. The UFS series MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The much lower ON-state voltage drop varies only moderately between 25 and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.
● Short-circuit rating
● 230ns Fall time @ TJ = 150°C
● 208W Total power dissipation @ TC = 25°C
Fairchild
8 Pages / 0.26 MByte
Fairchild
13 Pages / 0.57 MByte
Fairchild
1 Pages / 0.44 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
Trans IGBT Chip N-CH 600V 63A 208000mW 3Pin(3+Tab) TO-247 Rail
Intersil
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
