TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 60.0 A |
Case/Package | TO-247 |
Polarity | N-Channel |
Power Dissipation | 208 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. It is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.
● Short-circuit rating
● 1.45V @ IC = 30A Low saturation voltage
● 90ns Fall time @ TJ = 150°C
● 208W Total power dissipation @ TC = 25°C
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