| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-247-2 |
DESCRIPTION
●HFA08PB120 is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 8 A continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs.
●FEATURES
●• Ultrafast recovery
●• Ultrasoft recovery
●• Very low IRRM
●• Very low Qrr
●• Specified at operating conditions
●• Designed and qualified for industrial level
●BENEFITS
●• Reduced RFI and EMI
●• Reduced power loss in diode and switching transistor
●• Higher frequency operation
●• Reduced snubbing
●• Reduced parts count
Vishay Semiconductor
7 Pages / 0.1 MByte
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