General Description
●The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.
●Features
●As a remote variable resistor:
●■≤100Ωto ≥300MΩ
●■≥99.9% linearity
●■≤15pF shunt capacitance
●■≥100GΩI/O isolation resistance
●As an analog switch:
●■Extremely low offset voltage
●■60 Vpk-pksignal capability
●■No charge injection or latch-up
●■ton, toff≤15µS
●■UL recognized (File #E90700)
●Applications
●As a remote variable resistor:
●■Isolated variable attenuator
●■Automatic gain control
●■Active filter fine tuning/band switching As an analog switch:
●■Isolated sample and hold circuit
●■Multiplexed, optically isolated A/D conversion
