DESCRIPTION
●The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.
●FEATURES
●As a remote variable resistor
●• ≤ 100Ω to ≥ 300 MΩ
●• ≥ 99.9% linearity
●• ≤ 15 pF shunt capacitance
●• ≥ 100 GΩ I/O isolation resistance
●As an analog switch
●• Extremely low offset voltage
●• 60 Vpk-pk signal capability
●• No charge injection or latch-up
●• ton, toff ≤ 15 µS
●• UL recognized (File #E90700)
●• VDE recognized (File #E94766)
● – Ordering option ‘300’ (e.g. H11F1.300)
●APPLICATIONS
●As a variable resistor –
●• Isolated variable attenuator
●• Automatic gain control
●• Active filter fine tuning/band switching
●As an analog switch –
●• Isolated sample and hold circuit
●• Multiplexed, optically isolated A/D conversion
