| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO3P(LH) |
HIGH POWER SWITCHING APPLICATIONS
● Fourth generation IGBT
● FRD included between emitter and collector
● Enhancement mode type
● High speed IGBT: tf= 0.25μs (TYP.)
● FRD : trr= 0.7μs (TYP.)
● Low saturation voltage : VCE (sat)= 2.1V (TYP.)
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