| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3P |
| Polarity | N-Channel |
| Power Dissipation | 240 W |
| Rise Time | 70.0 ns |
The GT50J325 from Toshiba is a N channel silicon insulated gate bipolar transistor in through hole TO-3P package. IGBT typically used at fast switching and high power switching applications.
● Fourth generation IGBT
● Enhancement mode type
● Fast switching
● Operating frequency up to 50KHz
● Maximum collector emitter saturation voltage of 2.45V
● FRD included between emitter and collector
● Collector emitter voltage VCES of 600V
● DC collector current of 50A
● Junction temperature of 150°C
● Collector power dissipation of 240W
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