| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 4.00 A |
| Case/Package | TO-220F |
| Drain to Source Resistance (on) (Rds) | 4.20 Ω |
| Polarity | N-Channel |
| Power Dissipation | 47.0 W |
| Drain to Source Voltage (Vds) | 900 V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
General Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
●Features
●• 4A, 900V, RDS(on) = 4.2Ω @VGS = 10 V
●• Low gate charge ( typical 17nC)
●• Low Crss ( typical 5.6 pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
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