| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 800 V |
| Current Rating | 8.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 1.55 Ω |
| Polarity | N-Channel |
| Power Dissipation | 178 W |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 8.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FQP8N80C is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (35nC)
● Low Crss (13pF)
● 100% avalanche tested
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MOSFET N-CH 800V 8A TO-220
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FAIRCHILD SEMICONDUCTOR FQP8N80C Power MOSFET, N Channel, 8A, 800V, 1.29Ω, 10V, 5V
Freescale
MOSFET N-CH 800V 8A TO-220
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