| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 52.4 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 21.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 121 W |
| Input Capacitance | 1.25 nF |
| Gate Charge | 24.5 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 52.0 A |
| Rise Time | 380 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FQP50N06L is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
● Improved system reliability in PFC and soft switching topologies
● Switching loss improvements
● Lower conduction loss
● 175°C Maximum junction temperature rating
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