TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 32.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 27.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 79.0 W |
Drain to Source Voltage (Vds) | 60.0 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | 32.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The FQP30N06L is a QFET® N-channel enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
● Low gate charge
● 100% Avalanche tested
● Low crss (typical 50pF)
● ±20V Gate-source voltage
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