| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 2.00 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 4.70 Ω |
| Polarity | N-Channel |
| Power Dissipation | 54.0 W |
| Input Capacitance | 235 pF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 2.00 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FQP2N60C is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild"s proprietary, planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
● Low gate charge
● 100% Avalanche tested
● Improved system reliability in PFC and soft switching topologies
● Switching loss improvements
● Lower conduction loss
Fairchild
20 Pages / 2.6 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
Trans MOSFET N-CH 600V 2.4A 3Pin(3+Tab) TO-220
ON Semiconductor
MOSFET N-CH 600V 2.4A TO-220
Fairchild
FAIRCHILD SEMICONDUCTOR FQP2N60C Power MOSFET, N Channel, 2A, 600V, 3.6Ω, 10V, 4V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
