| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 1.90 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 4.70 Ω |
| Polarity | N-Channel |
| Power Dissipation | 44.0 W |
| Input Capacitance | 235 pF |
| Gate Charge | 12.0 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 1.90 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.
●This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
●Product Highlights
●1.9A, 600V, R
●DS(on)
●= 4.7
●W
●@V
●GS
●= 10 V
●Low gate charge (typical 8.5 nC)
●Low Crss (typical 4.3 pF)
●Fast switching
●100% avalanche tested
●Improved dv/dt capability
Fairchild
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