| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 1.60 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 7.10 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 1.00 kV |
| Breakdown Voltage (Drain to Source) | 1.00 kV |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 1.60 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The FQD2N100TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (12nC)
● Low Crss (5pF)
● 100% avalanche tested
Fairchild
2 Pages / 0.22 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
7 Pages / 0.87 MByte
Fairchild
Trans MOSFET N-CH 1kV 1.6A 3Pin(2+Tab) DPAK
Fairchild
Power Field-Effect Transistor, 1.6A I(D), 1000V, 9Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
Fairchild
Trans MOSFET N-CH 1kV 1.6A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
MOSFET N-CH 1000V 1.6A DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
