| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 10.0 A |
| Case/Package | TO-252 |
| Drain to Source Resistance (on) (Rds) | 180 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 10.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FQD13N10LTM is a QFET® enhancement-mode N-channel Power MOSFET is produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● Low level gate drive requirements allowing direct operation form logic drivers
● 100% Avalanche tested
● 8.7nC Typical low gate charge
● 20pF Typical low Crss
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