| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 900 V |
| Current Rating | 5.40 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 2.30 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.13 W |
| Drain to Source Voltage (Vds) | 900 V |
| Breakdown Voltage (Drain to Source) | 900 V |
| Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
| Continuous Drain Current (Ids) | 5.40 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FQB5N90TM is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (31nC)
● Low Crss (13pF)
● 100% avalanche tested
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FAIRCHILD SEMICONDUCTOR FQB5N90TM Power MOSFET, N Channel, 5.4A, 900V, 1.8Ω, 10V, 3V
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