| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -47.0 A |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 21.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 160 W |
| Drain to Source Voltage (Vds) | -60.0 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | -47.0 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FQB47P06TM_AM002 is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 84nC Typical low gate charge
● 320pF Typical low Crss
Fairchild
10 Pages / 1.17 MByte
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FAIRCHILD SEMICONDUCTOR FQB47P06TM_AM002 MOSFET Transistor, P Channel, 47A, -60V, 26mohm, -10V, -4V
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Trans MOSFET P-CH 60V 47A 3Pin(2+Tab) D2PAK T/R
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