| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -34.0 A |
| Case/Package | TO-263 |
| Drain to Source Resistance (on) (Rds) | 60.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 3.75 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | 33.5 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FQB34P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
● 100% Avalanche tested
● 85nC Typical low gate charge
● 170pF Typical low Crss
Fairchild
8 Pages / 1.36 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
4 Pages / 0.6 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FQB34P10TM MOSFET Transistor, P Channel, -33.5A, -100V, 0.049Ω, -10V, -4V
Fairchild
Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
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