| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 31.0 A |
| Case/Package | D2PAK |
| Drain to Source Resistance (on) (Rds) | 75.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Input Capacitance | 3.90 nF |
| Gate Charge | 72.0 nC |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 31.0 A |
| Rise Time | 520 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FQB34N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low level gate drive requirement allowing direct operation from logic drivers
● 100% Avalanche tested
● 55nC Typical low gate charge
● 52pF Typical low Crss
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