| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 21.0 A |
| Case/Package | TO-263AB |
| Drain to Source Resistance (on) (Rds) | 140 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.13 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 21.0 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FQB19N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 100% Avalanche tested
● 31nC Typical low gate charge
● 30pF Typical low Crss
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