TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 250 V |
Current Rating | 40.0 A |
Case/Package | TO3P |
Drain to Source Resistance (on) (Rds) | 51.0 mΩ |
Polarity | N-Channel |
Power Dissipation | 280 W |
Drain to Source Voltage (Vds) | 250 V |
Breakdown Voltage (Drain to Source) | 250 V |
Breakdown Voltage (Gate to Source) | -30.0 V to 30.0 V |
Continuous Drain Current (Ids) | 40.0 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
The FQA40N25 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● 82.5nC Typical low gate charge
● 70pF Typical low Crss
● 100% Avalanche tested
Fairchild
8 Pages / 1.85 MByte
Fairchild
4 Pages / 0.62 MByte
Fairchild
FQA40N25 Series 250V 40A 70mOhm N-Ch N-Channel QFET® MOSFET - TO-3PN
Freescale
MOSFET N-CH 250V 40A TO-3P
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