| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3PN |
| Polarity | N-Channel |
| Drain to Source Voltage (Vds) | 900V |
| Continuous Drain Current (Ids) | 11A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The FQA11N90C_F109 is a N-channel QFET® enhancement-mode power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
● Low gate charge (60nC)
● Low Crss (23pF)
● 100% avalanche tested
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8 Pages / 1.05 MByte
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FAIRCHILD SEMICONDUCTOR FQA11N90C_F109 Power MOSFET, N Channel, 11A, 900V, 0.91Ω, 10V, 5V
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Trans MOSFET N-CH 900V 11A 3Pin(3+Tab) TO-3PN
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Trans MOSFET N-CH 900V 11.4A 3Pin(3+Tab) TO-3P Rail
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FQA11N90C_F109 N-Channel QFET MOSFET 900V, 11A, 1.1Ω
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