The three terminals of this PNP FMMT591TA GP BJT from Diodes Zetex give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
Vishay Semiconductor
DIODES INC. FMMT591 Bipolar (BJT) Single Transistor, PNP, 60V, 150MHz, 0.5W(1/2W), -1A, 100 hFE
ETC
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Vishay Semiconductor
DIODES INC. FMMT591A Bipolar (BJT) Single Transistor, PNP, 40V, 150MHz, 0.5W(1/2W), -1A, 300 hFE
Diodes Zetex
TRANS PNP 60V 1A MED PWR SOT23-3
Diodes Zetex
TRANS PNP 40V 1A MED PWR SOT23-3
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