Description
●The FM25V10 is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.
●Features
●1M bit Ferroelectric Nonvolatile RAM
●• Organized as 131,072 x 8 bits
●• High Endurance 100 Trillion (1014) Read/Writes
●• 10 Year Data Retention
●• NoDelay™ Writes
●• Advanced High-Reliability Ferroelectric Process
●Very Fast Serial Peripheral Interface - SPI
●• Up to 40 MHz Frequency
●• Direct Hardware Replacement for Serial Flash
●• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
●Write Protection Scheme
●• Hardware Protection
●• Software Protection
●Device ID and Serial Number
●• Device ID reads out Manufacturer ID & Part ID
●• Unique Serial Number (FM25VN10)
●Low Voltage, Low Power
●• Low Voltage Operation 2.0V – 3.6V
●• 90 µA Standby Current (typ.)
●• 5 µA Sleep Mode Current (typ.)
●Industry Standard Configurations
●• Industrial Temperature -40°C to +85°C
●• 8-pin “Green”/RoHS SOIC Package
