Description
●The FM24CL16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.
●Features
●16K bit Ferroelectric Nonvolatile RAM
●• Organized as 2,048 x 8 bits
●• High Endurance 1014 Read/Writes
●• 38 year Data Retention
●• NoDelay™ Writes
●• Advanced High-Reliability Ferroelectric Process
●Fast Two-wire Serial Interface
●• Up to 1MHz Maximum Bus Frequency
●• Direct Hardware Replacement for EEPROM
●• Supports legacy timing for 100 kHz & 400 kHz
●Low Power Operation
●• 2.7 - 3.65V Operation
●• 100 µA Active Current (100 kHz)
●• 3 µA (typ.) Standby Current
●Industry Standard Configuration
●• Industrial Temperature -40° C to +85° C
●• 8-pin “Green”/RoHS SOIC and TDFN Packages
