| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 60.0 A |
| Case/Package | TO-264 |
| Power Dissipation | 180 W |
| Breakdown Voltage (Collector to Emitter) | 1.00 kV |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
General Description
●Using Fairchild"s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
●Features
●• High Speed Switching
●• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
●• High Input Impedance
●• Built-in Fast Recovery Diode
●Applications
●• UPS, Welder
Fairchild
7 Pages / 0.37 MByte
Fairchild
13 Pages / 0.57 MByte
Fairchild
Trans IGBT Chip N-CH 1000V 60A 180000mW 3Pin(3+Tab) TO-264 Rail
Fairchild
Trans IGBT Chip N-CH 1000V 60A 180000mW 3Pin(3+Tab) TO-264 Rail
Fairchild
Trans IGBT Chip N-CH 1kV 60A 3Pin(3+Tab) TO-264 Rail
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