| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
Summary of Features:
● Low V(CEsat)
● T(vj op) = 150°C
● V(CEsat) with positive Temperature Coefficient
● High Power Density
● Isolated Base Plate
● Standard Housing
●Benefits:
● Compact Modules
● Easy and most reliable assembly
● No Plugs and Cables required
● Ideal for Low Inductive System Designs
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Trans IGBT Module N-CH 1200V 600A 3650000mW 11Pin Tray
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INFINEON FF600R12IE4 IGBT Array & Module Transistor, PrimePACK™2, N Channel, 600A, 1.75V, 3.35kW, 1.2kV, Module
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1200V PrimePACK™2 dual IGBT module especially developed for CAV Applications. Including Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC.
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INFINEON FF600R12IP4 IGBT Array & Module Transistor, N Channel, 600A, 1.7V, 3.35kW, 1.2kV, Module
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Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-10
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