| TYPE | DESCRIPTION |
|---|
| Mounting Style | Screw |
Summary of Features:
● Low V CEsat
● T vj op = 150°C
● Standard Housing
●Benefits:
● Compact Modules
● Easy and most reliable assembly
● No Plugs and Cables required
● Ideal for Low Inductive System Designs
Infineon
9 Pages / 0.58 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
Trans IGBT Module N-CH 1.2kV 675A 11Pin
Infineon
Trans IGBT Module N-CH 1200V 580A 2400000mW 7Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1.2kV 675A 11Pin
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
Infineon
INFINEON FF450R12KT4HOSA1 IGBT Array & Module Transistor, Dual NPN, 580A, 1.75V, 2.4kW, 1.2kV, Module
Infineon
IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module
Infineon
Trans IGBT Module N-CH 1200V 580A 7Pin 62MM
Infineon
Trans IGBT Module N-CH 1200V 600A 2100000mW 11Pin ECONOD-3 Tray
Infineon
Trans IGBT Module N-CH 1.2kV 450A 10Pin PRIME2
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