Summary of Features:
● Superior solution for frequency controlled inverter drives
● UL/CSA Certification with UL1557 E83336
● Operating temperature up to 125 °C (max 150 °C)
● Optimized switching characteristic like softness and reduced switching losses
● Existing packages with higher current capability
● RoHS compliant
●Benefits:
● Flexibility
● Optimal electrical performance
● Highest reliability
Infineon
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Infineon
Trans IGBT Module N-CH 1200V 580A 2000000mW 7Pin 62MM Tray
Eupec
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Infineon
Our well-known 62mm 1200V Common Emitter IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3) This product is also available with Thermal Interface Material pre-applied: FF400R12KT3P_E
Infineon
Our well-known 62mm 1200V dual IGBT modules with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode are the right choice for your design.
Infineon
Our well-known 62mm 1200V Common Emitter IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3) This product is also available with Thermal Interface Material pre-applied: FF400R12KT3P_E
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