| TYPE | DESCRIPTION |
|---|
| Power Dissipation | 2.70 kW |
| Breakdown Voltage (Collector to Emitter) | 1.20 kV |
Infineon
Trans IGBT Module N-CH 1200V 580A 2000000mW 7Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1200V 580A 2000000mW 7Pin 62MM Tray
Infineon
Trans IGBT Module N-CH 1200V 580A 2000000mW 7Pin 62MM-1 Tray
Infineon
Our well-known 62mm 1200V Common Emitter IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3) This product is also available with Thermal Interface Material pre-applied: FF400R12KT3P_E
Eupec
FF400R12KE3 power transistor module
Eupec
Eupec Infineon power module
Infineon
Our well-known 62mm 1200V dual IGBT modules with fast trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode are the right choice for your design.
Infineon
Our well-known 62mm 1200V Common Emitter IGBT modules with common emitter and fast trench/fieldstop IGBT3. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF400R12KT3) This product is also available with Thermal Interface Material pre-applied: FF400R12KT3P_E
Infineon
Trans IGBT Module N-CH 1.2kV 400A 10Pin IHM130
Eupec
Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
