| TYPE | DESCRIPTION |
|---|
| Power Dissipation | 1.40 kW |
| Breakdown Voltage (Collector to Emitter) | 1.20 kV |
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Trans IGBT Module N-CH 1.2kV 275A 7Pin 62MM
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62mm C-series module with the fast IGBT2 for high-frequency switching
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Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin 62MM-1 Tray
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Trans IGBT Module N-CH 1200V 240A 1100000mW 7Pin 62MM Tray
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Trans IGBT Module N-CH 1200V 275A 1400000mW 7Pin 62MM-1 Tray
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Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray
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Trans IGBT Module N-CH 1.2kV 295A 7Pin 62MM
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Trans IGBT Module N-CH 1200V 295A 1050000mW 7Pin Tray
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IGBT Array & Module Transistor, Dual NPN, 320A, 1.75V, 1.1kW, 1.2kV, Module
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