| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 6.30 A |
| Case/Package | SOT-223 |
| Drain to Source Resistance (on) (Rds) | 38.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.00 W |
| Input Capacitance | 500 pF |
| Gate Charge | 10.7 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 6.30 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDT439N is a 30V N-channel 2.5V specified enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. This very high density process is specially tailored to minimize on-state resistance and provide superior switching performance. It is well suited for low voltage and low current applications. UniFET™ MOSFET is Fairchild Semiconductor"s high voltage MOSFET family based on advanced planar stripe and DMOS technology. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
● Switching loss improvements
● Lower conduction loss
● 100% Avalanche tested
● Smaller stored energy in dynamic characteristics
● A lower gate charge (Qg) performance
● Improved system reliability in PFC and soft switching topologies
Fairchild
17 Pages / 1.1 MByte
Fairchild
5 Pages / 0.14 MByte
Fairchild
Trans MOSFET N-CH 30V 6.3A 4Pin(3+Tab) SOT-223 T/R
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