| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 7.00 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 24.0 mΩ, 530 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2.00 W |
| Input Capacitance | 540 pF |
| Gate Charge | 5.70 nC |
| Drain to Source Voltage (Vds) | 35.0 V |
| Breakdown Voltage (Drain to Source) | -35.0 V to 35.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 16.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS8960C is a dual N/P-channel enhancement-mode MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Fast switching speed
Fairchild
9 Pages / 0.15 MByte
Fairchild
4 Pages / 0.19 MByte
Fairchild
Trans MOSFET N/P-CH 35V 7A/5A 8Pin SOIC N T/R
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