| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 5.50 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 30.0 mΩ, 72.0 mΩ |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2.00 W |
| Input Capacitance | 1.13 nF |
| Gate Charge | 20.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
| Continuous Drain Current (Ids) | 5.50 A |
| Rise Time | 23.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS8928A is a dual N/P-channel enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
Fairchild
10 Pages / 0.13 MByte
Fairchild
4 Pages / 0.19 MByte
Fairchild
1 Pages / 0.14 MByte
Fairchild
Trans MOSFET N/P-CH 30V/20V 5.5A/4A 8Pin SOIC N T/R
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