TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | -20.0 V |
Current Rating | -5.00 A |
Case/Package | SOIC |
Drain to Source Resistance (on) (Rds) | 47.0 mΩ |
Polarity | P-Channel |
Power Dissipation | 2.50 W |
Input Capacitance | 1.13 nF |
Gate Charge | 20.0 nC |
Drain to Source Voltage (Vds) | 20.0 V |
Breakdown Voltage (Gate to Source) | -8.00 V to 8.00 V |
Continuous Drain Current (Ids) | 5.00 mA |
Rise Time | 23.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
The FDS8433A is a single P-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process especially tailored to minimize ON-state resistance and provide superior switching performance. It is suitable for load switch, DC-to-DC converter and battery protection applications.
● Fast switching speed
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
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