TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | -30.0 V |
Current Rating | -6.00 A |
Case/Package | SOIC |
Drain to Source Resistance (on) (Rds) | 32.0 mΩ |
Polarity | P-Channel, Dual P-Channel |
Power Dissipation | 2.00 W |
Input Capacitance | 1.54 nF |
Gate Charge | 14.5 nC |
Drain to Source Voltage (Vds) | -30.0 V |
Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
Continuous Drain Current (Ids) | -6.00 A |
Rise Time | 22.0 ns |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Listed by Manufacturer |
Packaging | Cut Tape (CT) |
The FDS6975 is a dual P-channel logic level MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for notebook computer applications load switching, battery charging circuits and DC-to-DC conversion.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
Fairchild
8 Pages / 0.16 MByte
Fairchild
5 Pages / 0.11 MByte
Fairchild
1 Pages / 0.14 MByte
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