| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 8.20 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 22.0 mΩ |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.00 W |
| Input Capacitance | 570 pF |
| Gate Charge | 10.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 6.90 A, 8.20 A |
| Rise Time | 5.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDS6900AS is a 30V N-channel PowerTrench® SyncFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild"s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild"s monolithic SyncFET technology. This product is general usage and suitable for many different applications.
● Includes SyncFET Schottky body diode
● High performance trench technology for extremely low RDS (on)
● High power and current handling capability
Fairchild
4 Pages / 0.19 MByte
Fairchild
Trans MOSFET N-CH 30V 6.9A/8.2A 8Pin SOIC T/R
Fairchild
Dual N-Ch PowerTrench SyncFet
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