| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 9.40 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 2.00 W |
| Input Capacitance | 1.82 nF |
| Gate Charge | 16.0 nC |
| Drain to Source Voltage (Vds) | 20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 9.40 A |
| Rise Time | 15.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR), Cut Tape (CT) |
The FDS6898A is a dual N-channel logic level PWM optimized MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
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