| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -13.0 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 9.00 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 3.94 nF |
| Gate Charge | 71.0 nC |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | 13.0 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS6679 is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers and battery chargers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
Fairchild
4 Pages / 0.09 MByte
Fairchild
4 Pages / 0.19 MByte
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