| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SO |
| Drain to Source Resistance (on) (Rds) | 7.00 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Drain to Source Voltage (Vds) | 30V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -16.0 V to 16.0 V |
| Continuous Drain Current (Ids) | 14.5 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Reel |
General Description
●The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.
●Features
●• 14.5 A, 30 V. RDS(ON) max= 6.0 mΩ @ VGS = 10 V
● RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
●• Includes SyncFET Schottky body diode
●• Low gate charge (45nC typical)
●• High performance trench technology for extremely low RDS(ON)and fast switching
●• High power and current handling capability
●• RoHS Compliant
Fairchild
10 Pages / 0.24 MByte
Fairchild
10 Pages / 0.24 MByte
Fairchild
Trans MOSFET N-CH 30V 14.5A 8Pin SOIC
Fairchild
FAIRCHILD SEMICONDUCTOR FDS6676AS MOSFET Transistor, N Channel + Schottky, 14.5A, 30V, 0.0045Ω, 10V, 1.5V
Fairchild
Trans MOSFET N-CH 30V 14.5A 8Pin SOIC N T/R
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