| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -11.0 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 3.00 nF |
| Gate Charge | 30.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 16.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS6675 is a single P-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is well suited for load switching, battery charging circuits and DC-to-DC conversion.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 30nC Typical low gate charge
Fairchild
1 Pages / 0.71 MByte
Fairchild
10 Pages / 0.86 MByte
Fairchild
1 Pages / 0.14 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
