TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SO |
Drain to Source Resistance (on) (Rds) | 6.50 mΩ |
Polarity | P-Channel |
Power Dissipation | 2.50 W |
Drain to Source Voltage (Vds) | 30.0 V |
Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
Continuous Drain Current (Ids) | 14.5 mA |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Reel |
The FDS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 6.5kV Typical HBM ESD protection level
Fairchild
11 Pages / 0.15 MByte
Fairchild
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Trans MOSFET P-CH 30V 14.5A 8Pin SOIC N T/R
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ON Semiconductor
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