| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 12.5 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 6.80 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 5.07 nF |
| Gate Charge | 33.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 12.5 A |
| Rise Time | 18.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tape |
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R
●DS(ON)
●and fast switching speed.
●Product Highlights
●12.5 A, 30 V.
●R
●DS(ON)
●= 8 m
●W
●@ V
●GS
●= 10 V
●R
●DS(ON)
●= 9.5 m
●W
●@ V
●GS
●= 4.5 V
Fairchild
5 Pages / 0.08 MByte
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