| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 8.40 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 22.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 560 pF |
| Gate Charge | 5.40 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 8.40 A |
| Rise Time | 5.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Cut Tape (CT) |
The FDS6612A is a single N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
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8 Pages / 0.52 MByte
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1 Pages / 0.14 MByte
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Trans MOSFET N-CH 30V 8.4A 8Pin SOIC N T/R
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Single N-Channel, Logic Level, Power Trench MOSFET
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