| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -11.0 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 14.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 4.04 nF |
| Gate Charge | 43.0 nC |
| Drain to Source Voltage (Vds) | -20.0 V |
| Breakdown Voltage (Drain to Source) | 20.0 V |
| Breakdown Voltage (Gate to Source) | -12.0 V to 12.0 V |
| Continuous Drain Current (Ids) | 11.0 A |
| Rise Time | 17.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS6576 is a 2.5V specified P-channel MOSFET in a rugged gate version of Fairchild Semiconductor"s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It can be used in load switch and battery protection.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 43nC Typical low gate charge
Fairchild
6 Pages / 0.17 MByte
Fairchild
5 Pages / 0.43 MByte
Fairchild
5 Pages / 0.43 MByte
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