| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 8.00 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 20.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.50 W |
| Input Capacitance | 1.85 nF |
| Gate Charge | 30.0 nC |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 8.00 A |
| Rise Time | 8.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS5680 is a N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain superior switching performance. It is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 30nC Typical low gate charge
Fairchild
11 Pages / 0.15 MByte
Fairchild
5 Pages / 0.12 MByte
Fairchild
1 Pages / 0.14 MByte
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