| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -7.00 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 23.0 mΩ |
| Polarity | P-Channel, Dual P-Channel |
| Power Dissipation | 1.60 W |
| Input Capacitance | 1.23 nF |
| Gate Charge | 15.0 nC |
| Drain to Source Voltage (Vds) | -30.0 V |
| Breakdown Voltage (Drain to Source) | 12.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The FDS4935A is a dual P-channel PowerTrench® MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V). It is suitable for load-switch and battery protection applications.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● -7A Continuous drain current
● -30A Pulsed drain current
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