| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -7.00 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 23.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.00 W |
| Input Capacitance | 1.23 nF |
| Gate Charge | 15.0 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -25.0 V to 25.0 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Listed by Manufacturer |
| Packaging | Tape |
General Description
●This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
●Features
●• –7 A, –30 V RDS(ON)= 23 mΩ@ VGS= –10 V
● RDS(ON)= 35 mΩ@ VGS= –4.5 V
●• Low gate charge (15nC typical)
●• Fast switching speed
●• High performance trench technology for extremely low RDS(ON)
●• High power and current handling capability
●Applications
●• Power management
●• Load switch
●• Battery protection
Fairchild
5 Pages / 0.11 MByte
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