| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 4.70 A |
| Case/Package | SOIC |
| Drain to Source Resistance (on) (Rds) | 44.0 mΩ |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.00 W |
| Input Capacitance | 1.18 nF |
| Gate Charge | 25.0 nC |
| Drain to Source Voltage (Vds) | 80.0 V |
| Breakdown Voltage (Drain to Source) | 80.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 4.70 A |
| Rise Time | 7.00 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape |
The FDS3890 is a PowerTrench® dual N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. This MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● 4.7A Continuous drain current
● 20A Pulsed drain current
Fairchild
5 Pages / 0.08 MByte
Fairchild
1 Pages / 0.14 MByte
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