| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 160 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 4.10 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Input Capacitance | 5.20 nF |
| Gate Charge | 106 nC |
| Drain to Source Voltage (Vds) | 30.0 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | -20.0 V to 20.0 V |
| Continuous Drain Current (Ids) | 156 A |
| Rise Time | 105 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The FDP8870 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
Fairchild
9 Pages / 0.26 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
4 Pages / 0.17 MByte
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